1 - 4 ? 2000 ixys all rights reserved ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 11n80 11 a 13n80 13 a i dm t c = 25 c, pulse width limited by t jm 11n80 44 a 13n80 52 a i ar t c = 25 c 11n80 11 a 13n80 13 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g hiperfet tm power mosfets n-channel enhancement mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 aa (ixfm) g = gate, d = drain, s = source, tab = drain features ? international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters synchronous rectification battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls low voltage relays advantages easy to mount with 1 screw (to-247) (isolated mounting screw hole) space savings high power density d g v dss i d25 r ds(on) ixfh/ixfm 11 n80 800 v 11 a 0.95 ixfh/ixfm 13 n80 800 v 13 a 0.80 t rr 250 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 800 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j =25 c 250 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 11n80 0.95 13n80 0.80 pulse test, t 300 s, duty cycle d 2 % 91528f(7/97) (tab)
2 - 4 ? 2000 ixys all rights reserved to-247 ad (ixfh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-204 aa (ixfm) outline dim. millimeter inches min. max. min. max. a 38.61 39.12 1.520 1.540 b 19.43 19.94 - 0.785 c 6.40 9.14 0.252 0.360 d 0.97 1.09 0.038 0.043 e 1.53 2.92 0.060 0.115 f 30.15 bsc 1.187 bsc g 10.67 11.17 0.420 0.440 h 5.21 5.71 0.205 0.225 j 16.64 17.14 0.655 0.675 k 11.18 12.19 0.440 0.480 q 3.84 4.19 0.151 0.165 r 25.16 25.90 0.991 1.020 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 8 14 s c iss 4200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 360 pf c rss 100 pf t d(on) 20 50 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 50 ns t d(off) r g = 2 (external) 63 100 ns t f 32 50 ns q g(on) 128 155 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 45 nc q gd 55 80 nc r thjc 0.42 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 11n80 11 a 13n80 13 a i sm repetitive; 11n80 44 a pulse width limited by t jm 13n80 52 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr t j =25 c 250 ns t j = 125 c 400 ns q rm 1 c i rm 8.5 a i f = i s -di/dt = 100 a/ s, v r = 100 v ixfh 11n80 ixfh 13n80 ixfm 11n80 ixfm 13n80 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs(th) t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 2 4 6 8 10 12 14 16 18 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d - amperes 02468101214161820222426 r ds(on) - ohms 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 v gs = 10v t j = 25 c v gs - volts 012345678910 i d - amperes 0 2 4 6 8 10 12 14 16 18 t j = 25 c v ds = 10v v ds - volts 024681012 i d - amperes 0 2 4 6 8 10 12 14 16 18 7v v gs = 10v 8v v gs = 15v i d = 6.5a 11n80 13n80 bv dss t j = 25 c fig. 1 output characteristics fig. 2 input admittance fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage ixfh 11n80 ixfh 13n80 ixfm 11n80 ixfm 13n80
4 - 4 ? 2000 ixys all rights reserved fig.7 gate charge characteristic curve fig.8 forward bias safe operating area fig.9 capacitance curves fig.10 source current vs. source to drain voltage fig.11 transient thermal impedance v ds - volts 1 10 100 1000 i d - amperes 0.1 1 10 v sd - volts 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 2 4 6 8 10 12 14 16 18 v ce - volts 0 5 10 15 20 25 capacitance - pf 0 500 1000 1500 2000 2500 3000 3500 4000 4500 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal response - k/w 0.001 0.01 0.1 1 d=0.5 c rss c oss 100ms 10ms 1ms 100s 10s limited by r ds(on) c iss single pulse gate charge - ncoulombs 0 25 50 75 100 125 150 v ge - volts 0 2 4 6 8 10 v ds = 400v i d = 13a i g = 10ma t j = 125 c t j = 25 c d=0.2 d=0.1 d=0.05 d=0.02 d=0.01 f = 1 mhz v ds = 25v ixfh 11n80 ixfh 13n80 ixfm 11n80 ixfm 13n80
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